• Home
  • BUSINESS AREA
  • Semiconductor
Semiconductor Business Area Products
  • Failure Analysis
  • Wafer Inspection
Laser & Chemical Decapsulation
Wet Chemisty
  • Drop technique or automated decapsulator
  • Positive or Negative pressure
  • Nitric acid (HNO3) 65 a 90℃
  • Sulfuric acid (H2SO4) 140 a 255℃
  • Acid mix 27 a 100℃
Dry chemistry
  • RF Plasma enclosure
  • 02 / CF4 then 02 or Ar
  • N2 or CO2 blowing
Mecanical : Milling
LASER Ablation
Decap methods : Working Together
Equipment Summary
Auto Optical Inspection of the Surface on wafers using vision system inside the equipment
Feature
  • Rapid Inspection with a Line Scan Camera
  • Faster than manual inspection with eyes
  • Auto Loading, Auto Alignment
  • High Reliability with Vision System
  • NG map and auto counting
  • Photo Process, Etching Process
System Configuration
NG Detection
Wafer Bow/Warp/Planarity Inspection
  • Surface Bow
    Bow-X : -90,135 ㎛
    Bow-Y : 103,813 ㎛
    Bow-XY : 103,813 ㎛
  • Surface Warp
    Max, -local : -104,574 ㎛
    Max, +local : 100.364 ㎛
    Warp : 204.938 ㎛
Item Specification
Measuring Wavelength 1300 nm
Working Range 24 - 44 mm
Measuring Spot Size 24 ㎛
Layer Thickness Range 7 - 750 ㎛
Repeatabillity < 100 nm
Acquisition Rate 4 kHz
Sensor Dimension 61 x 61 x 120 mm3